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125 x 125 mm Mono crystalline wafer B GradeItem SpecificationsGrowth method CzCrystal Orientation ± 3°Dopant type / Dopant P / Boron Oxygen concentration ≤ 1.0 x 1018Carbon concentration ≤ 5.0 x 1017Dislocation density ≤ 3000 pcs/cm2Resisitivity 1 - 3.0 Ohm-cm Lifetime ≥ 10 μSGeometry Pseudo-squareThickness 200 ± 20 μmTTV ≤ 40 μmWafer side 125 ± 0.5 mm Wafer diameter 165 ± 0.5 mm Sawmarks ≤ 30 μmSurface quality No visible surface stains, marks, traces, cracks,Edge defects No corner chips, microchips, v-cracks Chips Width ≤ 1 mm,depth ≤ 0.5mm no more than 2 pointsWarpage ≤ 60 μmPacking SpecificationsPackage Standard Transit capable packageLabels Part no. P.O. no. Lot No. No. of Wafers, Dimension, etc.,Mechanical SpecificationsElectronic specificationsOptical SpecificationsMaterial propertiesReference standardsASTM F 26-87aASTM F 1188-00ASTM F 1391-93ASTM F 1809 / 10 ASTM F 84-99 SEMILAB WT-2000
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