硅片术语-solarbe文库

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硅片行业术语大全Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor. 受主 - 一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子Alignment Precision - Displacement of patterns that occurs during the photolithography process. 套准精度 - 在光刻工艺中转移图形的精度。Anisotropic - A process of etching that has very little or no undercutting 各向异性 - 在蚀刻过程中，只做少量或不做侧向凹刻。Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the res*不良词语 *t of stains, fingerprints, water spots, etc. 沾污区域 - 任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse. 椭圆方位角 - 测量入射面和主晶轴之间的角度。Backside - The bottom surface of a silicon wafer. Note This term is not preferred; instead, use ,back surface. 背面 - 晶圆片的底部表面。（注不推荐该术语，建议使用 “ 背部表面 ” ）Base Silicon Layer - The silicon wafer that is located underneath the ins* 不良词语 *ator layer, which supports the silicon film on top of the wafer. 底部硅层 - 在绝缘层下部的晶圆片，是顶部硅层的基础。Bipolar - Transistors that are able to use both holes and electrons as charge carriers. 双极晶体管 - 能够采用空穴和电子传导电荷的晶体管。Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an ins*不良词语 *ating layer. 绑定晶圆片 - 两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。Bonding Interface - The area where the bonding of two wafers occurs. 绑定面 - 两个晶圆片结合的接触区。Buried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic. 埋层 - 为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。Buried Oxide Layer BOX - The layer that ins* 不良词语 *ates between the two wafers. 氧化埋层 BOX - 在两个晶圆片间的绝缘层。Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer. 载流子 - 晶圆片中用来传导电流的空穴或电子。Chemical-Mechanical Polish CMP - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process. 化学 -机械抛光 CMP - 平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand. 卡盘痕迹 - 在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕迹。Cleavage Plane - A fracture plane that is preferred. 解理面 - 破裂面Crack - A mark found on a wafer that is greater than 0.25 mm in length. 裂纹 - 长度大于 0.25 毫米的晶圆片表面微痕。Crater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually. 微坑 - 在扩散照明下可见的，晶圆片表面可区分的缺陷。Conductivity electrical - A measurement of how easily charge carriers can flow throughout a material. 传导性（电学方面） - 一种关于载流子通过物质难易度的测量指标。Conductivity Type - The type of charge carriers in a wafer, such as “N-type ” and “P-type ” . 导电类型 - 晶圆片中载流子的类型， N 型和 P 型。Contaminant, Partic* 不良词语 *ate see light point defect 污染微粒（参见光点缺陷）Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer. 沾污区域 - 部分晶圆片区域被颗粒沾污，造成不利特性影响。Contamination Partic* 不良词语 *ate - Particles found on the surface of a silicon wafer. 沾污颗粒 - 晶圆片表面上的颗粒。Crystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuits electrical performance. 晶体缺陷 - 部分晶体包含的、会影响电路性能的空隙和层错。Crystal Indices see Miller indices 晶体指数（参见米勒指数）Depletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers. 耗尽层 - 晶圆片上的电场区域，此区域排除载流子。Dimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions. 表面起伏 - 在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。Donor - A contaminate th at has donated extra “ free ” electrons, thus making a wafer “N-Type ” . 施主 - 可提供 “ 自由 ” 电子的搀杂物，使晶圆片呈现为 N 型。Dopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements. 搀杂剂 - 可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。晶圆片搀杂剂可以在元素周期表的 III 和 V 族元素中发现。Doping - The process of the donation of an electron or hole to the conduction process by a dopant. 掺杂 - 把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。Edge Chip and Indent - An edge imperfection that is greater than 0.25 mm. 芯片边缘和缩进 - 晶片中不完整的边缘部分超过 0.25 毫米。Edge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. This varies according to the dimensions of the wafer. 边缘排除区域 - 位于质量保证区和晶圆片外围之间的区域。（根据晶圆片的尺寸不同而有所不同。）Edge Exclusion, Nominal EE - The distance between the fixed quality area and the periphery of a wafer. 名义上边缘排除 EE - 质量保证区和晶圆片外围之间的距离。Edge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically. 边缘轮廓 - 通过化学或机械方法连接起来的两个晶圆片边缘。Etch - A process of chemical reactions or physical removal to rid the wafer of excess materials. 蚀刻 - 通过化学反应或物理方法去除晶圆片的多余物质。Fixed Quality Area FQA - The area that is most central on a wafer surface. 质量保证区 FQA - 晶圆片表面中央的大部分。Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes. 平边 - 晶圆片圆周上的一个小平面，作为晶向定位的依据。Flat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. Perpendic* 不良词语 *ar to the flat 平口直径 - 由小平面的中心通过晶圆片中心到对面边缘的直线距离。Four-Point Probe - Test equipment used to test resistivity of wafers. 四探针 - 测量半导体晶片表面电阻的设备。Furnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process. 炉管和热处理 - 温度测量的工艺设备，具有恒定的处理温度。Front Side - The top side of a silicon wafer. This term is not preferred; use front surface instead. 正面 - 晶圆片的顶部表面（此术语不推荐，建议使用 “ 前部表面 ” ）。Goniometer - An instrument used in measuring angles. 角度计 - 用来测量角度的设备。Gradient, Resistivity not preferred; see resistivity variation 电阻梯度（不推荐使用，参见 “ 电阻变化 ” ）Groove - A scratch that was not completely polished out. 凹槽 - 没有被完全清除的擦伤。Hand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer for identification purposes. 手工印记 - 为区分不同的晶圆片而手工在背面做出的标记。Haze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer. 雾度 - 晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。Hole - Similar to a positive charge, this is caused by the absence of a valence electron. 空穴 - 和正电荷类似，是由缺少价电子引起的。Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut. 晶锭 - 由多晶或单晶形成的圆柱体，晶圆片由此切割而成。Laser Light-Scattering Event - A signal p* 不良词语 *se that locates surface imperfections on a wafer. 激光散射 - 由晶圆片表面缺陷引起的脉冲信号。Lay - The main direction of surface texture on a wafer. 层 - 晶圆片表面结构的主要方向。Light Point Defect LPD Not preferred; see localized light-scatterer 光点缺陷 LPD （不推荐使用，参见 “ 局部光散射 ” ）Lithography - The process used to transfer patterns onto wafers. 光刻 - 从掩膜到圆片转移的过程。Localized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect. 局部光散射 - 晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺陷。Lot - Wafers of similar sizes and characteristics placed together in a shipment. 批次 - 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area. 多数载流子 - 一种载流子，在半导体材料中起支配作用的空穴或电子，例如在 N 型中是电子。