硅片行业术语大全-solarbe文库

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硅片行业术语大全中英文对照 I-Z 硅片行业术语大全中英文对照 I-ZIngot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut. 晶锭 - 由多晶或单晶形成的圆柱体，晶圆片由此切割而成。Laser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer . 激光散射 - 由晶圆片表面缺陷引起的脉冲信号。Lay - The main direction of surface texture on a wafer . 层 - 晶圆片表面结构的主要方向。Light Point Defect LPD Not preferred; see localized light-scatterer 光点缺陷 LPD （不推荐使用，参见 “ 局部光散射 ” ）Lithography - The process used to transfer patterns onto wafers. 光刻 - 从掩膜到圆片转移的过程。Localized Light-Scatterer - One feature on the surface of a wafer , such as a pit or a scratch that scatters light. It is also called a light point defect. 局部光散射 - 晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺陷。Lot - Wafers of similar sizes and characteristics placed together in a shipment. 批次 - 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。Majority Carrier - A carrier , either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area. 多数载流子 - 一种载流子，在半导体材料中起支配作用的空穴或电子，例如在 N 型中是电子。Mechanical Test Wafer - A silicon wafer used for testing purposes. 机械测试晶圆片 - 用于测试的晶圆片。Microroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 μ m. 微粗糙 - 小于 100 微米的表面粗糙部分。Miller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal. Miller 索指数 - 三个整数，用于确定某个并行面。这些整数是来自相同系统的基本向量。Minimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable. 最小条件或方向 - 确定晶圆片是否合格的允许条件。Minority Carrier - A carrier , either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area. 少数载流子 - 在半导体材料中不起支配作用的移动电荷，在 P 型中是电子，在 N 型中是空穴。Mound - A raised defect on the surface of a wafer measuring more than 0.25 mm. 堆垛 - 晶圆片表面超过 0.25 毫米的缺陷。Notch - An indent on the edge of a wafer used for orientation purposes. 凹槽 - 晶圆片边缘上用于晶向定位的小凹槽。Orange Peel - A roughened surface that is visible to the unaided eye. 桔皮 - 可以用肉眼看到的粗糙表面Orthogonal Misorientation - 直角定向误差 - Particle - A small piece of material found on a wafer that is not connected with it. 颗粒 - 晶圆片上的细小物质。Particle Counting - Wafers that are used to test tools for particle contamination. 颗粒计算 - 用来测试晶圆片颗粒污染的测试工具。Particulate Contamination - Particles found on the surface of a wafer . They appear as bright points when a collineated light is shined on the wafer . 颗粒污染 - 晶圆片表面的颗粒。Pit - A non-removable imperfection found on the surface of a wafer . 深坑 - 一种晶圆片表面无法消除的缺陷。Point Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom. 点缺陷 - 不纯净的晶缺陷，例如格子空缺或原子空隙。Preferential Etch - 优先蚀刻 - Premium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer . 测试晶圆片 - 影印过程中用于颗粒计算、测量溶解度和检测金属污染的晶圆片。对于具体应用该晶圆片有严格的要求，但是要比主晶圆片要求宽松些。Primary Orientation Flat - The longest flat found on the wafer . 主定位边 - 晶圆片上最长的定位边。Process Test Wafer - A wafer that can be used for processes as well as area cleanliness. 加工测试晶圆片 - 用于区域清洁过程中的晶圆片。Profilometer - A tool that is used for measuring surface topography. 表面形貌剂 - 一种用来测量晶圆片表面形貌的工具。Resistivity Electrical - The amount of difficulty that charged carriers have in moving throughout material. 电阻率（电学方面） - 材料反抗或对抗电荷在其中通过的一种物理特性。Required - The minimum specifications needed by the customer when ordering wafers. 必需 - 订购晶圆片时客户必须达到的最小规格。Roughness - The texture found on the surface of the wafer that is spaced very closely together . 粗糙度 - 晶圆片表面间隙很小的纹理。Saw Marks - Surface irregularities 锯痕 - 表面不规则。Scan Direction - In the flatness calculation, the direction of the subsites. 扫描方向 - 平整度测量中，局部平面的方向。Scanner Site Flatness - 局部平整度扫描仪 - Scratch - A mark that is found on the wafer surface. 擦伤 - 晶圆片表面的痕迹。Secondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer . 第二定位边 - 比主定位边小的定位边，它的位置决定了晶圆片的类型和晶向。Shape - 形状 - Site - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. This area is rectangular in shape 局部表面 - 晶圆片前面上平行或垂直于主定位边方向的区域。Site Array - a neighboring set of sites 局部表面系列 - 一系列的相关局部表面。Site Flatness - 局部平整 - Slip - A defect pattern of small ridges found on the surface of the wafer . 划伤 - 晶圆片表面上的小皱造成的缺陷。Smudge - A defect or contamination found on the wafer caused by fingerprints. 污迹 - 晶圆片上指纹造成的缺陷或污染。Sori - Striation - Defects or contaminations found in the shape of a helix. 条痕 - 螺纹上的缺陷或污染。Subsite, of a Site - An area found within the site, also rectangular . The center of the subsite must be located within the original site. 局部子表面 - 局部表面内的区域，也是矩形的。子站中心必须位于原始站点内部。Surface Texture - Variations found on the real surface of the wafer that deviate from the reference surface. 表面纹理 - 晶圆片实际面与参考面的差异情况。Test Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes. 测试晶圆片 - 用于生产中监测和测试的晶圆片。Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer . 顶部硅膜厚度 - 顶部硅层表面和氧化层表面间的距离。Top Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer . 顶部硅膜 - 生产半导体电路的硅层，位于绝缘层顶部。Total Indicator Reading TIR - The smallest distance between planes on the surface of the wafer . 总计指示剂数 TIR - 晶圆片表面位面间的最短距离。Virgin Test Wafer - A wafer that has not been used in manufacturing or other processes. 原始测试晶圆片 - 还没有用于生产或其他流程中的晶圆片。Void - The lack of any sort of bond particularly a chemical bond at the site of bonding. 无效 - 在应该绑定的地方没有绑定（特别是化学绑定）。Waves - Curves and contours found on the surface of the wafer that can be seen by the naked eye. 波浪 - 晶圆片表面通过肉眼能发现的弯曲和曲线。Waviness - Widely spaced imperfections on the surface of a wafer . 波纹 - 晶圆片表面经常出现的缺陷。