单晶硅片制绒不均匀性对PECVD的影响-杜俊霖-中国科学院.pdf-solarbe文库

返回相似

资源描述：

杜俊霖 Ph.D. Research Center for New Energy Technology The purpose of texturization Pre clean SDR TEX 14th China SoG Silicon and PV Power Conference, Xi’an, 2018 Page 1 Dissolve the contaminatio n on the raw wafer Reflectivity 35.4 Remove the saw damage caused by diamond wire Reflectivity 37.6 Form pyramid morpholog y made of 111 Reflectivity 12.1 The process of texturization 1min Rfl 37.0 2min Rfl 31.3 3min Rfl 24.5 4min Rfl 15.7 6min Rfl 13.5 8min Rfl 12.1 100 111 14th China SoG Silicon and PV Power Conference, Xi’an, 2018 Page 2 The optimal time of texturization Secondary reflection Primary reflection 70.5° （ 100）（ 111） Primary reflection Optimal TEX time 14th China SoG Silicon and PV Power Conference, Xi’an, 2018 Page 3  Wafer thickness is reduced. Plane 100 is multiplied. Pyramid shape is destroyed. The distribution of pyramid sizes Image obtained by 3D laser microscope Distribution of pyramid sizes 14th China SoG Silicon and PV Power Conference, Xi’an, 2018 Page 4 Various size distributions 4.08μm, R 12.3 3.16μm, R 12.2 2.14μm, R 12.1 14th China SoG Silicon and PV Power Conference, Xi’an, 2018 Page 5 Nonuniform texturization Side view of wafer carrier Light and dark areas 14th China SoG Silicon and PV Power Conference, Xi’an, 2018 Page 6 PL image and lifetime map PL image after PECVD Lifetime 526μs, VOC 726mV Sample SDRTEXSC13minHF Lifetime map of the same sample Flow of solution and N2 bubbles 14th China SoG Silicon and PV Power Conference, Xi’an, 2018 Page 7 Support bars SDR 10minTEXSC1 PECVD 87μs/660mV PL images for different SDR times SDR 0minTEXSC1 PECVD1059μs/734mV SDR 5minTEXSC1 PECVD 416μs/710mV 14th China SoG Silicon and PV Power Conference, Xi’an, 2018 Page 8 Infrared absorption spectrum The residue of additive on the textured wafer increases while applying SDR. A possible explanation could be that the wafer with a rough surface reacts violently with KOH, releasing a large amount of H2, which hindering the absorption of additive to the wafer surface. Si2KOHH2O K2SiO32H2↑ 14th China SoG Silicon and PV Power Conference, Xi’an, 2018 Page 9 Replacing NH3 with KOH SDR 10minTEXSC1’ 3min SC1’ KOHH2O2 PECVD 445μs/724mV SDR 10minTEXSC1 3min SC1 NH3H2O2 PECVD 238μs/699mV 14th China SoG Silicon and PV Power Conference, Xi’an, 2018 Page 10 The effect of basicity in cleaning 14th China SoG Silicon and PV Power Conference, Xi’an, 2018 Page 11 SDR10minTEXSC2 SC2 HClH2O2 PECVD 69μs/652mV SDR10minTEXSC1’ SC1’ KOH H2O2 PECVD 445μs/724mV SDR10minTEXSC1 SC1 NH3 H2O2 PECVD 238μs/699mV Conclusions 1. The reflectivity reaches the lowest point at a right texturization time. 2. Both large and small pyramid sizes lead to similar reflectivities. 3. Nonuniform flow leads to nonuniform distribution of pyramid size. 4. Wafer with SDR absorbs greater amount of additive than rough wafer. 5. Enhancing the basicity of solution increases cleaning efficiency. 14th China SoG Silicon and PV Power Conference, Xi’an, 2018 Page 12

点击查看更多>>