掺硼纳米非晶硅的太阳能电池窗口层应用研究.pdf-solarbe文库

资源描述：

掺硼纳米非晶硅的太阳能电池窗口层应用研究作者李喆，张溪文，韩高荣， Li Zhe ， Zhang Xiwen， Han Gaorong作者单位浙江大学硅材料国家重点实验室 ,杭州 ,310027刊名真空科学与技术学报英文刊名 JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY年，卷期 2009， 292被引用次数 0次参考文献 23条1. Adolf Christopher Hebling . Hans-Werner Schock Photovoltsic history,status and outlook 20032. Carlson D E . Wronski C R Amorphous Silicon Solar Cell 19763. Green M A Recent developments in photovoltaics 20044. Staebler D L . Wronski C R Reversible conductivity chages in discharge-produced amorphous Si 19775. Sokti Hazra . Swafi Ray Photovoltaic application of nanomorph silicon thin films prepared by plasmaenhanced chemical vadeposition 19996. Sukti Hazra . Swati Ray Nanocrystalline silicon as intrinsic layer in thin film solar cells 19997. Edelman F. Chack A. Weil R Structure of PECVD SiH films for solar cell application 20038. 陈庆东 . 张宇翔 . 郭敏不同衬底上沉积硅薄膜的固相晶化研究 [期刊论文] -真空科学与技术 2008039. He Y L. Hu G Y. Yu M B Conduction mechanism of hydrogenated nanocrystalline silicon films 19991910. Akihisa Matsuda . Toshihiko Yoslddo . Sotoshi Yamasaki Structural Study on Amorphous-MicrocrystallineMixed-Phase SiH Films 19810611. Easwar Srinivasan . Gregory N Parsons Hydrogen elimination and phase transitions in pulsed-gasplasma deposition of amorphous and microcrystalline silicon 19970612. Robert J Hamers . Wang Yajun. Shan Jun Atomic-level spatial distributions of dopants on siliconsurfacestoward a microscopic undenstanding of surface chemical reactivity 199613. Beeman D. Tsu R. Thorpe M F Structural information form the Raman spectrum of amorphous silicon198514. 程光熙拉曼布里渊散身 -- 原理及就用 200115. Swanepoel R Determnination of the thickness and optical constants of amorphous silicon 198316. Wemple S H Refractive-index behavior of amorphous semiconductors and glasses 197317. Ley,L Topics in applied physics 198418. 胡志华 . 忞显伯非晶硅碳 a-SiCH 薄膜光学常数的透身谱表征 [期刊论文] -半导体学报 20050119. Tawada Y. Tsuge K. Kondo M Properties and strueture of a-SiCH for high-efficiency a-Si solar cell19820720. Hattorl Y . Kruangam D. Toyama T Highly Conductivep-type Microcrystalline SiCH Prepared by ECRPlasma CVD 198821. Miyajima S . Yamada A. Konagal M Highly Conductive Microcrystalline Silicon Carbide Films Depositedby the Hot Wire Cell Method and Its Application to Amorphous Silicon Solar Cells 200322. Akihisa Matsuda . Madoka Takai . Tomoniri Nishimoto Control of plasma chemistry for preeparing highlystabilized amorphous silicon at high growth rate 200323. Ambrosone G. Coscia U . Murri R Structural,optical and electrical charactefizations of μ c-SiHfilms deposited by PECVD 2005相似文献 1条1.期刊论文傅广生 . 张江勇 . 丁文革 . 吕雪芹 . 于威 . Fu Guangsheng. Zhang Jiangyong . Ding Wenge. Lü Xueqin. YuWei 纳米非晶硅薄膜的界面发光特性 - 半导体学报 2007,28z1采用螺旋波等离子体增强化学气相沉积 HWP-CVD技术沉积了不同氢稀释比的富硅氢化非晶氮化硅 a-SiNxH薄膜 , 并利用光致发光 PL和光致发光激发 PLE谱技术对其发光特性进行了研究 . 结果显示 , 所有样品发光均表现为两个带的叠加一个发光带随氢稀释比增大而发生蓝移 , 另一个发光带则固定在 2.9eV左右 . 前者关联于镶嵌在 a-SiNxH基质内非晶纳米硅颗粒的界面发光 , 后者来源于 a-SiNxH基质相关的局域态中电子和空穴对的辐射复合 . 并结合所沉积薄膜的吸收特性 , 分析了缺陷态和界面态对薄膜中非晶纳米硅界面发光特性的影响.本文链接 http//d.g.wanfangdata.com.cn/Periodical_zkkx200902002.aspx授权使用湖南大学 hunandx，授权号 6a1cd7af-76da-4000-90c0-9e0e00e8bc22下载时间 2010年 10月 13日