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保利协鑫能源控股有限公司 GCL-Poly Energy Holdings Limited The New Era of Casting Technology-Casting Mono-Si Dr. –Ing Yuepeng Wan CTO, GCL Poly Penang, March 12, 2019 Development History of GCL Casting mono-Si G series G3-Module products. More customers， more applications. G1-small scale production G2- Internal PV station For demonstration G3-better wafer 。 New Product. 2 1971～2008，Research work on mono-Casting, PV demonstration station only, BSF cells. 2011～2012, major wafer manufacturers promoted casting mono-Si wafers, such as Maple JA Solar, VirtueRenesolar, GBLLDK Solar and G1GCL-Poly; Some equipment companies, such as GT and JG Tec, provide furnaces for casting mono-Si. Since 2012, casting mono lost market share to high performance mc-Si. Casting Mono Quarsi-mono, Mono-like Market History Main Issues with the Previous Mono-like Products  Colors of small-grains, the appearance of modules with alkali textured cells is the main barrier for the market acceptance.  Ratio of wafers with full mono-Si area is low 30. Large portion of wafers with other grains called II, III category cells.  Color difference at the joints caused by uneven seeds.  Cell efficiency distribution too wide. A big portion of cells with low efficiency. Technical issues Appearance issue flakes of small-grains Appearance issue seed joints. 3 Optimized Growth Processes and Better Quality Control for G3 All new hotzone Wafer sorting  Better thermal symmetry and enhanced convection by all new hotzone.  Larger portion of full mono through controlling of nucleation and propagation from side walls.  Avoid dislocation multiplication by special arrangement of seeds.  Lower cost by seed recycling.  Improve the aesthetic appearance of module by wafer sorting. Enhanced convection 4 Lower Dislocation Density, Higher Cell Efficiency and Fewer low efficiency Cells for G3 Direction of crystal growth PL of wafers before improvement PL of wafers after improvement PL of bricks before improvement PL of bricks after improvement Direction of crystal growth Bottom Top 5 Controlling the ratio of Small grains Wafer Sorting by mono-Si Area NG OK OK Item Spec. Testing equip. Method Proportion of mono-Si area Grade Ⅰ≥99 Grade Ⅲ＜ 99 Hennecke TFC or NVCD（IR）  Grade Ⅲ wafers definition ＜99mono-Si area by sorting machine.  Grade Ⅰ wafers full mono-Si area or ≤1 area of other small grains. 6 Appearance of G3 Cell and Module VS G3 module Cz module G3 cell Full area of mono-Si ～ 90 in production  Alkali-textured recommended, higher power output, and good appearance for G3 module  MCCE some customers, better appearance, power output close to those alkali-textured. 7 1 area of small grains colors of small grains ～ 10 in production Typical Appearance of G3 Module5BB 8 Typical Appearance of G3 ModuleMBB 9 Dislocation detection by PL eliminating the portion of low efficiency Item Spec. Testing equip. Method Proportion of defect ≤4.50 Semilab-PLB55 PL NG Proportion of defect1.46 OK 10  Before new wafer sorting 3300K MBB cells, 21.7, tailing of efficiency solved basically  After new wafer sorting Much lower ratio of cells with small grains，η0.1 to 21.8  In Feb. 2019, the average efficiency is 21.85 3000k in production Cell efficiency of G3 Alkali-textured12BBPERC Customer A 11 1.0 0.3 0.7 1.6 3.4 6.7 12.8 21.8 26.7 18.8 5.6 0.6 0.2 0.0 0.1 0.2 0.7 1.7 3.9 9.0 17.6 26.9 26.7 11.5 1.5 0 10 20 30 ＜21 21.0 21.1 21.2 21.3 21.4 21.5 21.6 21.7 21.8 21.9 22.0 22.1 Cell efficiency distribution, MBB-PERC 总体自动分选 Courtesy of customer A Before Sorting After Sorting Cell efficiency of G3 Alkali-textured12BBPERCSECustomer B Group QTY Eta Uoc Isc FF Rs Rsh IRev2 MBBSE 15403 21.95 0.6732 10.020 80.98 0.0014 621.02 0.0762 12 Courtesy of customer B  MBBPERCSE 21.95 average, of G3, about -0.25 lower VS 22.20Cz mono-Si 片源 Uoc （mV ） Isc （A ） FF （） Rs （m Ω） Rsh （Ω） Ncell （） Irev1 （A ） GCL 669.9 10.050 79.21 2.88 685.8 21.71 0.10 Cell efficiency of G3 MCCE9BBPERCSE Customer C  Average of cell efficiencyG3MCCE  Efficiency distribution of G3MCCE Courtesy of customer C G3 lower Oi and LID Efficiency degradation of G3 LID and LeTID VS Cz mono-Si 14 Module power of G3  380Wp of 72pcs module power for G3 modules  About 5Wp lower -5Wp VS Cz 72pcs module equal wafer size and cell process 15 Module power72 full cells EL of G3 Better vs High Efficiency mc-Si Module power 370W （鑫宇PERCMBB ） Module power 380W （苏民PERCMBBSE ） Module power 375W （鑫宇PERCMBB ） Module power 385W （苏民PERCMBBSE ） 16 More suitable for shingled-cell module Appearance of G3 shingled-cell module EL of G3 shingled-cell module  Output power of 72pcs shingled-cell module of G3 405Wp 17 6ppm G3 Vs 12-13ppm Cz Bottom and top-cutoff Co-doped method More suitable to shingled- cell module Lower Oi Lower LID Narrower resistivity distribution Squared Lower carbon footprint Advantages of G3 Power consumption -20kwh/kg Vs Cz; -0.06kwh/Wp Vs Cz 18 Outdoor Use Casting mono-Si Products are Reliable  2011-2012, 1GW module of casting mono-Si applied to PV station . Electric de France used casting mono-Si modules from Photowatt for its PV applications about 500MW.  PHOTONLab outdoor tests shows yield of Quasi-mono modules is good.  The data from GCL-poly self-built PV plant shows the yield of casting mono-Si is good. PHOTONLab’s outdoor module tests results of 2014 yield measurements （Photon户外组件评测2014年各类型组件发电量） Quasi-mono 1163.6 Yield/kWh/Kw Quasi-mono Remark 1. Installed in 2012 2. Mono modules 22, Multi 30, Quasi mono 1 Yield/kWh Results of 2017 yield measurements installed in 2016 （2016年安装的准单晶和多晶组件的2017年发电量） Remark 1. Inverter fault in June 2. Installed in 2016 158.75±0.25 161.75±0.25 166.00±0.25 Casting mono-Si Cz mono-Si Trend and Industry standard for Wafer Sizes Wp/Cell Cost of Wp of module  Bigger wafer/cell size within the equipment availability is the trend for PV.  In 2019, mainstream size of G3 will be 158.75。  GCL is leading the effort to establish new standard of wafer size（IEC） 156.75±0.25 158.75±0.25 161.75±0.25 166.00±0.25 156.75±0.25 20 2019.9 2019.6 Capacity/month 2018.12 2019.3 2019.12 20,000k 100MW 60,000k 300MW 140,000k 700MW 100,000k 500MW 180,000k 900MW  Converting more furnaces to satisfy the market demand.  About 8-10GW yearly capacity by the end of 2019。 Remark 5Wp/pcs Capacity planning of G3 21 高效多晶 High efficiency mc-Si 铸锭单晶 Casting mono-Si 直拉单晶 Cz mono-Si DW-S3 金刚线切S3 Co-doping S4 共掺杂S4 MCCE TS3/TS4 黑硅TS3/TS4 GCL casting mono-Si 鑫单晶（G3） P/N type RCz P/N型RCz单晶 P/N type CCz P/N型CCz单晶 GCL Customized Wafer Products HE mc-Si cell 高效多晶电池 HE PERC cell 高效 PERC 电池 HE PERC cell 高效 PERC 电池 Mono-Si PERC 单晶 PERC 电池 Mono-Si PERC 单晶 PERC 电池 Mono-Si PERT 单晶 PERT 电池 Mono-Si HJT 单晶 HJT 电池 22 2013 2018 2019 效率/ η S3 形核创新 0.40.5 2015 2016 2017 2020 TS 黑硅制绒 0.70.9 Sp适用于PERC 0.91.3 S4降低LID 0.50.6 G3 higher power casting mono 1.71.9 G4better for PERC 1.92.1 N1N type casting mono 2.63 2021 G5 co-doped casting mono 2.12.3 Product roadmap for GCL Casting Wafers  The performance of casting mono can be improved by nucleation, dopant, oxygen, etc. optimization.  Cost of casting mono-Si can be decreased continuously by process optimization and seed recycle  N type casting mono-Si will be developed next for N-PERT, N-TOPCON, HJT and IBC 23 Wafer cost vs cell efficiency differences 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 Wafer Cost Difference Yuan/Wp Cell Efficiency Difference The allowable cost difference with the cell efficiency difference（0.25元/片） 0.4 Balance of Cost Performance Muli- for PERCSp Multi S3 （ BSF ） cell cost Cast Mono G3 Comparison of Cost Performance of Casting wafers and Cz wafers Cell/Wafer η Δ η W/Piece P/Piece P/W Multi-BSF 18.8 3.0 4.62 2.15 0.465 Mult-PERC 20.5 1.3 5.03 2.15 0.427 Cast-PERC 21.4 0.4 5.25 2.85 0.543 Cz-PERC 21.8 5.35 3.25 0.607 （Wafer Price at 03-2019, 156.75 24  The best way of improving the cost performance cast technology is to increase the cell efficiency 。 Conclusion  GCL casting mono-Si wafer G3 has become a competitive product in PV market as a result of the recent progress in processes and cost reduction,  The issue of colors with small grains in the appearance of G3 module has been totally eliminated.  The absolute efficiency difference between G3 and Cz mono-Si cells is lower than 0.3 on the same production line.  The output power difference between G3 and Cz mono-Si module 72pcs is lower than 5Wp.  LID and LeTID of G3 cell and module are lower than Cz mono-Si on the same production line.  Oxygen of G3 6ppma is obviously lower than Cz mono-Si.  Cast mono can deliver narrower distribution of resistivity, which is beneficial to PERC cells.  G3 wafer is more suitable for shingled-cell module.  G3 wafer consumes less electricity comparing to CZ one. It has lower carbon footprint. 25 协鑫（集团）控股有限公司 www.gcl-power.com 苏州地址江苏省苏州工业园区新庆路28号协鑫能源中心电话 86-512-6853 6666 传真 86-512-6983 2396 上海地址上海市浦东新区世纪大道100号环球金融中心68楼电话 86-21-6857 9688 传真 86-21-6877 8699 香港地址香港九龙柯士甸道西一号环球贸易广场17楼电话 852-2526 8368 传真 852-2526 7638 Contact Dr. Yuepeng Wan wanyuepenggcl-power.com 26