切换
资源分类
文档管理
收藏夹
最新动态
登陆
注册
关闭
返回
下载
相似
相似资源:
自然资源保护协会-中国水泥生产碳减排技术标准体系和碳排放权交易标准体系研究(执行摘要)-12页.pdf
中银国际:政策推动+盈利模式完善,迎接大储放量元年.pdf
中原证券:锂电池销量环比回落,短期谨慎关注.pdf
中泰证券:沿海动力煤价支撑仍强,焦煤需求旺季即将到来.pdf
中信建投:七月社会总用电量维持高增,水力发电量环比改善.pdf
中国上市公司碳中和信息披露质量报告(2020-2022)--西北工业大学.pdf
中国再生资源回收行业发展报告(2023).pdf
中国海外煤电投资建设风险预警研究报告——印度尼西亚国别研究-绿色和平.pdf
中国城市绿色低碳建材应用现状评估报告-中国建筑节能协会.pdf
招商证券:工具行业锂电化+智能化趋势下,中国制造从幕后走向台前.pdf
浙商证券:盘古智能-风机润滑系统行业龙头,布局液压变桨引领国产替代.pdf
粤港澳大湾区气候协同的空气质量改善战略研究报告--北京大学.pdf
引领城市空中出租车变革(英) Volocopter 2019-6.pdf
徐伟:双碳目标下的热泵发展.pdf
信达证券:电力消费增速有所收窄,重磅电改政策有望落地.pdf
中国臭氧-颗粒物和温室气体协同控制的中长期战略研究--北京大学.pdf
向人人享有环境可持续的经济和社会公正过渡-国际劳工组织.pdf
正当其时、适逢其势:2023中国基础设施REITs可持续发展行动调研报告-普华永道.pdf
浙江省产品碳足迹核算与碳标签推广研究--浙江经济信息中心.pdf
文明的温度:气候变化对西北地区生态、产业及文化遗产系统性影响评估(甘肃)--绿色和平.pdf
投资气候,投资增长-OECD.pdf
资源描述:
14th China SoG Silicon and PV Power Conference Elimination of Light-Induced Degradation by Black Silicon Toni P. Pasanena, Chiara Modanesea, Ville Vähänissia, Hannu S. Lainea, Franziska Wolnyb, Alexander Oehlkeb, Christian Kustererb, Ismo T. S. Heikkinena,c, Matthias Wagnerb, Hele Savina aAalto University, Department of Electronics and Nanoengineering, Espoo, Finland bSolarWorld Industries GmbH, Bonn, Germany cBeneq Oy, Espoo, Finland 8-10 November 2018, Xi’an, China Black silicon provides several benefits Negligible reflectance Improved Isc No need for AR-coating Diamond wire sawing of mc-Si possible1 Material savings Enhanced impurity gettering2 Applicable to industrial production3 Long-term stability important 1F. Toor et al. Nanoscale 2016;815448. 2T.P. Pasanen et al. Sci Rep. 2018;91991. 3T.P. Pasanen et al. 35th EU PVSEC, 2018. 0 5 10 15 20 25 30 35 40 45 300 500 700 900 1100 Re flec tan ce Wavelength nm b-Si AlOx Acidic-texture SiNx 10.11.2018 T.P. Pasanen et al. 2 Industrial black mc-Si PERC 10.11.2018 T.P. Pasanen et al. 3 p-type mc-Si CVD AlOx CVD SiNx ALD AlOx CVD SiNx n p-type mc-Si Degradation one week under 0.5 sun illumination at 75 ˚C Black Si Acidic texture n LID imaging by PL 10.11.2018 4 initial – degraded / initial PL counts [a.u.] T.P. Pasanen et al. no degradation large degradation Black Si shows no degradation Saw damage removed, no texture ΔPL map Internal quantum efficiency Degradation one week under 0.5 sun illumination at 75 ˚C 10.11.2018 T.P. Pasanen et al. 5 Clear degradation in the bulk or at rear 0.70 0.75 0.80 0.85 0.90 0.95 1.00 850 900 950 1000 1050 Int ernal qu an tum effic ien cy IQE Wavelength nm Int ernal qu an tum effic ien cy IQE IQE 10.11.2018 T.P. Pasanen et al. 6 Black Si shows no degradation 0.985 0.99 0.995 1 1.005 0 50 100 150 Nor maliz ed V oc Degradation time h Nor maliz ed V oc 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 0 50 100 150 Normal ized ef fic ien cy Degradation time h Normal ized ef fic ien cy Cell efficiency 10.11.2018 7 T.P. Pasanen et al. Similar trend in Voc Physical background in enhanced impurity gettering 10.11.2018 T.P. Pasanen et al. 8 n n P P P P Larger surface area → higher P concentration 1-3 Enhanced impurity gettering4 70 μs 700 μs 1J. Oh et al. Nat Nanotech. 2012;7743-748. 2B. Kafle et al. Sol Energy Mater Sol Cells 2016;15294-102. 3T. Pasanen et al. Energy Procedia 2017;124307-312. 4T.P. Pasanen et al. Sci Rep. 2018;91991. After gettering b-Si 47 Ω/□ polished 74 Ω/□ 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 0 50 100 150 Norm ali zed ef fic ien cy Degradation time h Effect of hydrogen 10.11.2018 9 acidic texture, SiNx T.P. Pasanen et al. b-Si, AlOx b-Si, SiNx Hydrogen related Black Si related Conclusions Significantly reduced LID in b-Si cells Efficiency of b-Si cells remains stable, while acidic-textured equivalents degrade by nearly 4 rel. Excellent optical properties of b-Si allow to replace hydrogen-rich SiNx with ALD AlOx. Promotes elimination of LID Benefits of b-Si not limited to the excellent optical properties Accepted for publication in Progress in Photovoltaics Research and Applications DOI10.1002/pip.3088 10.11.2018 10 T.P. Pasanen et al. Acknowledgements 10.11.2018 11 T.P. Pasanen et al. Thank you for your attention Toni P. Pasanen Aalto University Department of Electronics and Nanoengineering toni.pasanenaalto.fi Effect of wafer thickness Acidic textured cell 165 µm SDR edge 155 µm b-Si center area 140 µm Magnitude of LID scales with surface area rather than wafer thickness. 10.11.2018 T.P. Pasanen et al. 13 Black Si cells Initial thickness 180 µm - SDR 2 x 10 µm - b-Si etching 15 µm - rear side etching 5 µm Final thickness 140 µm Acidic-textured cells Initial thickness 180 µm - acidic texturing 2 x 5 µm - rear side etching 5 µm Final thickness 165 µm
点击查看更多>>
收藏
下载该资源
京ICP备10028102号-1
电信与信息服务业务许可证:京ICP证120154号
地址:北京市大兴区亦庄经济开发区经海三路
天通泰科技金融谷 C座 16层 邮编:102600