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SINGULUS TECHNOLOGIESSingulus 湿法设备和 TCO镀膜设备在HJT电池的应用韩美洲 2019-03-20 无锡 SINGULUS TECHNOLOGIES AG 05-2018 - 2 - Outline 1 SINGULUS TECHNOLOGIES AG-公司介绍 2 HJT Solar Cell Process Flow-异质结电池工艺流程 4 GENERIS PVD 磁控溅射设备 3 SILEX II CLEANTEX-臭氧制绒湿法设备 SINGULUS TECHNOLOGIES AG 05-2018 - 3 - History SINGULUS TECHNOLOGIES Foundation SINGULUS TECHNOLOGIES Ernst Leybold started his business in Cologne Company building 1860 19661851 1860 1967 1995 LEYBOLD HERAEUS Vacuum Technology, Metallurgy and Coating Unicorn Pharmacy was founded 1600 in Hanau W.C. Heraeus took over business in 1851 and started with platinum 1851 Merger LEYBOLD / BALZERS 1995 2007 Acquisition SINGULUS STANGL SOLAR GmbH Singulus公司成立 1995年，技术前身是莱宝科技 -真空镀膜的鼻祖 SINGULUS TECHNOLOGIES AG 05-2018 - 4 - SINGULUS TECHNOLOGIES Main Bussiness 半导体医疗光伏装饰镀膜 SINGULUS TECHNOLOGIES AG 05-2018 - 5 - SINGULUS TECHNOLOGIES Headquarters in Kahl/Germany 总部所在地 -法兰克福 SINGULUS TECHNOLOGIES AG 05-2018 - 6 - Diversity of SINGULUS Sputtering Tools SINGULUS GENERIS NDT DECOLINEVISTARIS Gen I Gen II Gen III HJT ROTARIS TIMARISSingulus生产的 PVD各种应用总台数超过 8000台 SINGULUS TECHNOLOGIES AG 05-2018 - 7 - SINGULUS TECHNOLOGIES Manufacturing Location in Fürstenfeldbruck/Germany 德国慕尼黑工厂 -专门湿法设备生产 SINGULUS TECHNOLOGIES AG 05-2018 - 8 - Outline 4 GENERIS PVD 3 SILEX II CLEANTEX 1 SINGULUS TECHNOLOGIES AG 2 HJT Solar Cell Process Flow SINGULUS TECHNOLOGIES AG 05-2018 - 9 - Texturing /cleaning a-Si Fr./Re. TCO Fr./Re. Printing Fr./Re. HJT Solar Cell Process Flow GENERIS PVD SILEX II Singulus 提供 4步工艺中的 2步工艺设备 SINGULUS TECHNOLOGIES AG 05-2018 - 10 - Outline 2 HJT Solar Cell Process Flow 4 GENERIS PVD 3 SILEX II CLEANTEX 1 SINGULUS TECHNOLOGIES AG SINGULUS TECHNOLOGIES AG 05-2018 - 11 - SILEX II CLEANTEX Batch platform for advanced texturing/cleaning Batch size 200/400 wafers e.g. M2 Throughput up to 6400 wph gross ca. 270MW/a SILEX II CLEANTEX6400 湿法设备 -大产能 -270MW一台 -特别适合 GW级扩产 SINGULUS TECHNOLOGIES AG 05-2018 - 12 - Cleaning procedures for HJT NH4OH H2O2 SDR Tex NH4OH H2O2 HF HNO3 HCl H2O2 HF Dry DIO3 SDR Tex DIO3 HF HF Dry RCA O3 Preclean PostcleanStructuring Conditioning SC1 SC1 SC2 先进臭氧工艺工艺创新 SINGULUS TECHNOLOGIES AG 05-2018 - 13 - Cleaning procedures for HJT NH4OH H2O2 SDR Tex NH4OH H2O2 HF HNO3 HCl H2O2 HF Dry DIO3 SDR Tex DIO3 HF HF Dry RCA O3 Preclean PostcleanStructuring Conditioning SC1 SC1 SC2 No NH4OH, H2O2 or HNO3 不再含氨水，硝酸，双氧水环评方便 SINGULUS TECHNOLOGIES AG 05-2018 - 14 - Advantage 1 Process Quality Moldovan et al. FhG ISE on PVSEC-26， Oct. 2016 RCA O3 RCA O3 RCA O3 工艺保证 SINGULUS TECHNOLOGIES AG 05-2018 - 15 - Advantage 2 Process Stability工艺稳定性 Dosing principle in mass production RCA purely empirically O3 via monitoring real-time ppm value  Visibility of concentration and therefore much higher stability SINGULUS TECHNOLOGIES AG 05-2018 - 16 - €- €50,000.00 €100,000.00 €150,000.00 €200,000.00 €250,000.00 €300,000.00 2800-RCA 2800-O3 195万元 155万元 63万元 8万元 Δ 571 k€/a 417万元 /年 100MW RCA 100MW O3 H2O2 266.992,19 € - € KOH 263.813,71 € 264.657,12 € NH4OH 211.686,66 € - € Additive 171.478,91 € 172.027,13 € HNO3 86.319,53 € - € DI-Water 58.801,85 € 58.989,84 € Power 38.380,13 € 35.712,77 € HF 38.022,55 € 39.459,42 € HCl 18.117,33 € 7.573,02 € CDA 4.529,33 € 4.543,81 € N2 1.152,20 € 1.036,31 € O2 - € 3.826,37 € Total 1.159.294,37 € 587.825,78 € 846万元 429万元 100MW RCA 100MW O3 Advantage 3 Chemical Consumption-运行成本节约每年省 417万化学品的消耗 SINGULUS TECHNOLOGIES AG 05-2018 - 17 - Advantage 4 Disposal-污水处理问题太湖 /无锡， 2017年 9月 SINGULUS TECHNOLOGIES AG 05-2018 - 18 - Advantage 4 Disposal-污水处理成本节约 O3 vs. RCA  No N-containing disposal  Saving of waste treatment cost  No eutrophication 无水体富营养化 100MW-RCA 100MW-O3 NH4-containing 368 m3 0 NO3-1-containing 72 m3 0 Cost difference RMB 170万 NH4 氨氮 NO3-硝氮 SINGULUS TECHNOLOGIES AG 05-2018 - 19 - Advantage 5 Total CoO-总的运行成本 Amortization 10 years SILEX II CLEANTEX Configuration 100MW RCA 2800 wph 100MW O3 2800 wph 240MW O3 6400 wph Total CoO* €/wafer 0.067 0.040 0.036 总体拥有成本 * 人民币 /片 5角 3角 2角 7分成本节省 - -41 -47 * TCoO Consumption Disposal Manpower Depreciation 10 years SINGULUS TECHNOLOGIES AG 05-2018 - 20 - Outline 2 HJT Solar Cell Process Flow 4 GENERIS PVD 1 SINGULUS TECHNOLOGIES AG 3 SILEX II CLEANTEX SINGULUS TECHNOLOGIES AG 05-2018 - 21 - GENERIS PVD Overview-PVD介绍 Inline bifacial coating High throughput up to 6000 wph Coating of all common TCO and metal/alloy materials SINGULUS TECHNOLOGIES AG 05-2018 - 22 - Special for HJT Design 1-自动化上下料机 -非常的关键 Flexible Loading/Unloading Configuration Loading/unloading Loading Unloading Loading/unloading single-side and double-side available Fexible choice according to factory and automation layout Contactless grip of wafers for minimal surface damage SINGULUS TECHNOLOGIES AG September 2017- 23 - confidential Temperature Uniformity /- 5  Fast Heat-up / switch on-off at Buffer chamber 1  Static heating for excellent temperature uniformity  Keeping temperature process chamber Special for HJT Design 2 -温度稳定性 Temperature Homogeneity und Stability SINGULUS TECHNOLOGIES AG 05-2018 - 24 - Special for HJT Design 3 -上下镀膜模块随时切换 Flexible Choice of Deposition Order Power supply Cathod Cathod blocks are all lifted up in maintanence. Cathod blocks for top-down and bottom-up coating can be easily exchanged. SINGULUS TECHNOLOGIES AG 05-2018 - 25 - Special for HJT Design 4--带气体隔离模块 Separation of Deposition Processes Gas separation unit is available Coating processes for top-down and bottom-up can be adjusted independently. Maximal degree of freedom for process optimization and upgrade Top-down coating Bottom-up coating Gas separation unit 工艺窗口更宽 SINGULUS TECHNOLOGIES AG 05-2018 - 26 - Plasma damage How to reduce plasma damage SINGULUS TECHNOLOGIES AG 05-2018 - 27 - Lab tool avaliable –实验设备 -可以验证各种靶材 SINGULUS TECHNOLOGIES AG 05-2018 - 28 - Special Design for HJT 5 Balanced Magnetron with max B field Unbalanced magnetron balanced magnetron Balanced magnetron in use for minimal ion bombardment of underflying a-Si layers Magnetron with maximal B2282G deliverd best cell performance SINGULUS TECHNOLOGIES AG 05-2018 - 29 - Plasma damage No-没有电浆损伤 Jsc mA/cm2 Voc mV FF η iVoc mV before ITO 38.3 736 79.5 22.3 737 Voc ≈ iVoc No sputtering damage SINGULUS TECHNOLOGIES AG 05-2018 - 30 - Advantage 6 Total CoO-总的运行成本 Amortization 10 years GENERIS PVD Configuration 100MW 2600 wph 200MW O3 5200 wph 250MW O3 6000 wph Cost per wafer Only Raw material RMB/wafer 0.46 0.46 0.46 Total CoO 人民币 /片 9角 4 7角 5 7角成本节省 - -20 -26 * TCoO Consumption Disposal Manpower Depreciation 10 years