基于MCCE的晶硅太阳电池倒金字塔制绒技术研究-苏晓东-solarbe文库

资源描述：

基于MCCE 的晶硅太阳电池倒金字塔制绒技术研究 Inverted pyramid texture on silicon wafers with cost- effective MCCE Prof. Xiaodong Su Soochow university 苏州大学） 2018/11/10· 西安 2018 第十四届中国太阳级硅及光伏发电研讨会1. RD background 2. Research progress 3. Summary and prospect Outline1. RD background 年报告题目分会场 2012 全液相刻蚀制备黑硅及其太阳电池新型电池、薄膜电池 2013 超18 高效多晶黑硅太阳电池技术高效晶硅电池和组件制造技术 2014 下一代高效多晶黑硅金刚线切和纳米绒面新型电池技术 2015 具有普适性纳米陷光绒面黑硅太阳电池技术金刚石线切多晶硅片高效纳米制绒量产技术 2016 MCCE 技术构造从纳米到亚微米的陷光绒面黑硅技术与应用 2017 单晶快速制绒技术研究黑硅技术与应用 2018 基于MCCE 的晶硅太阳电池倒金字塔制绒技术研究黑硅技术与应用DWS-wafer Recipe Temperature Period Mono KOH additive 80-90 o C 5-10 min Poly HNO 3 HF additive 10 o C 200s Poly-MCCE KOH additive H 2 O 2 HF additives HNO 3 HF 80-90 o C 25 o C 10-20 o C 200s 1. RD background Si2NaOHH 2 ONa 2 SiO 3 2H 2 ↑ Si4H 2 OH 4 SiO 4 2H 2 ↑ H 4 SiO 4 H 2 SiO 3 H 2 O H 2 SiO 3 2NaOHNa 2 SiO 3 2H 2 O Oxidation Dissolution 3Si4HNO 3 3SiO 2 2HO 2 4NO  SiO 2 6HF H 2 SiF 6 2H 2 O Dissolution Oxidation ⚫ Current texturing process for mono- and poly-Si wafers100 atom density 2/a 2 1. RD background 111 atom density ≈ 2.3/a 2 ⚫ Texturing Back-bond breaking theory1. RD background Etching in HNO 3 /HF, R24 Etching in KOH, R12 Worm shape texture Saw damage dominated Upright pyramid texture Anisotropic dominated 1. RD background ⚫ Submicron texture of MCCE better appearance higher V oc Dominated by MCCE⚫ At present, Ag-MCCE DWS mc-Si solar cells have been mass produced over 20GW capacity in china. 1. RD background 2010 -2012 2012 -2014 2016 -Now 2014 -2016 Self-developed MCCE mass production process in lab first reported that the efficiency was higher than baseline. Established Soochow University-CSI photovoltaic research institute, co-developed MCCE black silicon industrialization technology, and ran in pilot line Mass production1 st line, the 1 st in the world Has produced over GW capacity, with an average production efficiency over 19.25.1. RD background ⚫ What’s coming next Is there an ultimate texturing route for mono and poly Mono Poly Qsc or Cast-mono ➢ Cost of poly ➢ Quality of mono1. RD background ➢ Reducing reflection of externally incident light. ➢ Giving a high reflection of internally incident light reflected from the back surface. ➢ 111 covered surface is better for passivation. ⚫ Inverted pyramid texture Patterned resist layer for etching Appl. Phys. Lett. 66, 36361995 Inverted pyramid texturing with cost-effective MCCE⚫ For regular inverted pyramids, the number of contributing reflection paths is increased from two to three. Incident light 36 ° Reflected A B Reflected Incident light A Reflected Reflected C B Reflected Incident light 2. Research progress75nm 80nm 85nm 90nm 95nm 1.6 1.8 2.0 2.2 2.4 Reflectance Thickness of front film SiNx Upright pyramids-1.4um Upright pyramids-2.0um Upright pyramids-2.5um Upright pyramids-3.0um Invert pyramids-1.4um Invert pyramids- 2.0um Invert pyramids- 2.5um Invert pyramids-3.0um Upright pyramids Inverted pyramids ⚫ Light trapping simulation based on the WAFER RAY TRACER tool for micro-pyramids texture. Simulation results show the antireflection of inverted pyramids texture outperforms upright pyramids texture. 2. Research progress⚫ In 2012, we were first reported that the efficiency of Ag-MCCE mc-Si solar cells could be higher than that industry cells. Nano-pyramid R 13.8 R 6.5 Nano-pore Adv. Funct. Mater. 24, 6708 2014 Better blue response 2. Research progressInverted pyramids with a size 300nm 2. Research progress⚫ Light trapping simulation based on quasi-static effective medium theory EMT, and nano-texture can be treated as a multilayer of silicon-air binary. multilayer of Si-air binary Sudden change of the impedance at Air/Si interface has been smoothed. Consequently, the reflection can be largely reduced. gradient refractive index and impedance 2. Research progress2. Research progress Texture Uoc （mV ） Jsc （A ） FF （） Eff （） Alkali-upright pyramids 666.2 40.25 80.5 21.59 MCCE-inverted pyramids 666.3 40.28 81.0 21.74 Upright pyramids Inverted pyramids Alkali texturing MCCE texturing ⚫ Inverted pyramid on mono wafer⚫ Inverted pyramids texture has excellent light-trapping ability, not only for those incident light perpendicular to the wafer, but also for those light incoming to the wafer with a certain angles. 2. Research progress vertical shooting 30 o inclined shooting 45 o inclined shooting 60 o inclined shooting inverted pyramids upright pyramids inverted pyramids upright pyramids inverted pyramids upright pyramids inverted pyramids upright pyramids一种晶体硅太阳能电池的绒面结构及其制备方法，ZL 2013 1 0127230.X 金刚石线切割硅片的表面处理方法及制绒方法，ZL 2015 1 0306801.5 2. Research progress ⚫ Above techniques are included in our patents.2. Research progress ⚫ MCCE is suitable for single face texturing on either poly or mono wafers. 晶体硅太阳电池的单面纳米绒面制备方法 ZL 2015 1 0486388.53. Summary and prospect ➢At present, more than 20GW capacity DWS mc-Si solar cells have been produced by using Ag-MCCE process on the industrial production lines in china. ➢MCCE is an universal technique to form nano-/micro-scale inverted pyramids on multi/mono/cast-mono Si wafer. ➢Preliminary results indicated that the performance of mono- Si solar cells with inverted pyramids texture by using Ag- MCCE process outperforms those cells with upright pyramids texture by using standard alkali process. ➢Most important, MCCE may be a low-cost and high- throughput technique for mono/cast-mono Si wafer by using single-face texturing.⚫ The advantages of MCCE inverted pyramids technology The higher conversion efficiency The better weak-light performances The better tilted-light performances Fast texturing process for mono-Si The lower cost by using single-face texturing 3. Summary and prospectContact information Su Xiaodong xdsusuda.edu.cn