非掺杂异质结IBC太阳能电池的研究-林豪-solarbe文库

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1896 1920 1987 2006 非掺杂异质结全背太阳能电池的研究林豪 1,3，高平奇 2,3，王佳佳 3，张龙飞 3，沈文忠 1,* 1上海交通大学太阳能研究所 ,物理与天文系 2中山大学，材料学院 3中国科学院宁波材料技术与工程研究所 1.Backgroud Eff. 26.6 HJ-IBC large-area 180 cm2 K. Yoshikawa, H. Kawasaki, W. Yoshida, T. Irie, K. Konishi, K. Nakano, T. Uto, D. Adachi, M. Kanematsu, H. Uzu, and K. Yamamoto, Nat. Energy 2, 17032 2017. 1.硅基太阳能电池最高效率 1.Backgroud 2.同质结、异质结与非掺杂异质结 n c-Si n c-Si n c-Si 扩硼（扩散炉 900℃ ）同质结 a-Si/c-Si 异质结非晶硅沉积（ PECVD 200 ℃ ） p c-Si 高公函材料沉积（热蒸发，旋涂等）非掺杂异质结 a-SiHp/a-SiHi TMO/a-SiHi a- Si Hp n c-Si a- Si H i EF Ev Ec TMO n c-Si a- Si H i EF Ev Ec n p EF Ev Ec 1.Backgroud H.-D. Um, N. Kim, K. Lee, I. Hwang, J. H. Seo and K. Seo,Nano Lett., 2016, 16, 981–987 3.同质结异质结 IBC工艺对比同质结 IBC 非掺杂异质结 IBC predictive efficiency 25.1. Simulation results 3 fA/cm2 46 fA/cm2 10 fA/cm2 2.PEDOTPSS/Si 异质结 IBC太阳能电池 Background Passivation results Designing Structures of PEDOT IBC Solarcell c1 c3 1.Deposition of Passivation anti-relection layer photoresist 2.Photolithography etch-back 3.MgOx/Al deposition Lift-off 4.Photolithography etch-back 5.PEDOTPSS spin coating Al deposition Fabrication process of PEDOTPSS/Si heterojunction ABC solar cell. The structure of PEDOTPSS/Si heterojunction based IBC solar cell. a Schematic of the IBC device. b The cross-sectional view of the back- contact region. c Corresponding SEM images of the back-contact region. d-f Magnified SEM images of white-square region in c from left to right, respectively. Scale bars, 10 𝜇𝑚 in c and 200 nm for d-f. 0.0 0.2 0.4 0.6 0 10 20 30 40 JscmA/cm 2 U V Fr ont -PEDOT B ack -PEDOT IB C- PE DO T a b c 44 mA/cm2 Ag Ag 𝐒𝐢𝐍𝐱/𝐀𝐥𝟐𝐎𝟑 n-Si PEDOTPSS Polymer MgOx/Al Results and Discussion Front-PEDOT Back-PEDOT IBC-PEDOT Electrode shade loss10 shading area 4.4 4.4 Parasitic absorption loss 2.0 3.0 Reflection loss 1.2 2.3 1.1 Jsc 31.8 34.9 38.4 Recombination and others loss 2.5 1.5 5.5 400 600 800 1000 0 5 10 15 Re flectio n Wa v el eng thnm Results and Discussion n-type Si Pitch 29th European Photovoltaic Solar Energy Conference and Exhibition, Amsterdam, the Netherlands, 22-26 September 2014 ETLBSF HTL emitter h h h electrical shading losses Simulation results by Lumerical DEVICE ETL HTL 100cm/s 100𝜇m n-type 4Ω ∙𝑐m 5cm/s 电子传输层钝化性能 ↑ 直接掩模 IBC工艺 3.直接掩模法异质结 IBC太阳能电池总结 1.采用埋栅工艺成功的制备了首个 PEDOTPSS/Si 异质结 IBC太阳能电池，且实验效率达到 16.3。 2.通过理论分析，发现进一步改善 ETL层的钝化效果， PEDOTPSS/Si 异质结 IBC太阳能电池有望超过 20的效率。 3.成功采用直接掩模的方法，制备了效率为 18的 TMO/a-Si/c-Si 异质结太阳能电池。 4.理论分析标明，进一步提高钝化，接触电阻等参数将进一步提升电池效率。 Thanks

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