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Photovoltaic Crystalline Wafers - Part2 Specifications for Geometric Characteristics 光伏晶体硅片 第 2部分 几何特性要求 GCL,2018.10 01 Wafer Standard system 硅片 标 准体系 02 Geometric Characteristics standard 硅片尺寸 标 准 03 Progress on the project 标 准 进 展 04 Work Plan for the Next Step 下一步工作 计 划 Outline 目录 1、 Wafer Standard system 硅片标准体系 ➢ Current related Wafer Standards 相关标准 China ✓ GB/T 26071 Mono-crystalline silicon wafers for photovoltaic solar cells , has been revised in 2017. ✓ GB/T 29055 Multi-crystalline silicon wafer for solar cell , is currently under revision led by GCL and is expected to be completed by the end of 2018. SEMI ✓ SEMI PV22-0817 Specification for Silicon Wafers for Use in Photovoltaic Solar Cells, Revised by SEMI PV Silicon Wafer Task Force in 2016. ✓ Contains all performance specifications for mono- crystalline and multi-crystalline silicon wafers. 1、 Wafer Standard system 硅片标准体系 -1 General specifications -2 Specifications for Geometric Characteristics -2-1 Test method for geometric dimensions of silicon wafers -2-2 Test method for thickness and thickness of variation of silicon wafers -3 Specifications for Electrical Characteristics -3-1 Test method for conductivity type of wafers -3-2 Test method for measuring resistivity of wafers with -3-3 Test method for minority carrier diffusion length by -3-4 Test method for measuring effective minority carrier lifetime of wafers by -4 Specifications for Chemical Characteristics -4-1 Test method for interstitial oxygen content of wafers with -4-2 Test method for substitutional carbon content of wafers by -4-3 Test method for measuring metal content of wafers by -5 Specifications for Crystal Characteristics -5-1 Test method for measuring crystallographic orientation of wafers with -5-2 Test method for measuring dislocation density of wafers by -6 Specifications for Surface Quality Characteristics -6-1 Test method for measuring warp on silicon wafers by -6-2 Test method for bow on Silicon wafers by . -6-3 Test method for surface flatness of Silicon wafers -6-4 Test method for measuring surface roughness and saw marks of Silicon wafers -6-5 Test method for measuring surface defects of Silicon wafers -6-6 Test method for measuring microcrack defects of Silicon wafers -7 Specifications for package of silicon wafers Photovoltaic Crystalline Wafers 2、 Specifications for Geometric Characteristics 几何特性要求 This standard specifies the standardized geometrical characteristics of crystalline silicon wafers based on large-scale production of crystalline silicon wafers and also provides recommendations on the future development of photovoltaic silicon wafer size to avoid the waste in production. 本 标准 规定了 光伏用晶体硅片的 标准 几何特性 要求, 并对光伏硅片尺寸 的未来发展给出了建议。 ➢ Scope 范围 2、 Specifications for Geometric Characteristics 几何特性要求 ➢ Main Content 主要内容 Square Wafer Dimensions 方形硅片外形尺寸 Pseudo-Square Wafer Dimensions 准方形硅片外形尺寸 Recommended dimensions 推荐尺寸 Thickness and Total Thickness Variation 厚度及 总 厚度 变 化 2、 Specifications for Geometric Characteristics 几何特性要求 ➢ Square Wafer Dimensions 方形硅片外形尺寸 Symbol in Figure 1 Dimensions Dimension Name A mm Wafer Edge Length B mm Chamfer Length β ° Right Angle Nominal Size mm 100.75 100.75±0.25 1.5±0.5 90±0.3 125.75 125.75±0.25 1.5±0.5 90±0.3 156.75 156.75±0.25 1.5±0.5 90±0.3 The allowable dimensions of square wafers are indicated in Figure 1 and Table1. Square wafers have straight chamfers at the corners. The typical chamfer angle , α, between the wafer edge and the straight chamfer is 45° , but there is no specification for this angle. If the wafer edge length is changed, it is recommended that the increase or decrease step be an integral multiple of 1 millimeter. The chamfer width , B, is specified to be identical on all four corners. 2、 Specifications for Geometric Characteristics 几何特性要求 ➢ Pseudo-Square Wafer Dimensions 准方形硅片外形尺寸 Symbol in Figure 2 Dimensions Dimension Name A mm Wafer Edge Length D mm Diagonal β ° Right Angle Nominal Size mm 100.75 100.75±0.25 126±0.25 90±0.3 125.75 125.75±0.25 151±0.25 90±0.3 156.75Ⅰ 156.75±0.25 205±0.25 90±0.3 156.75Ⅱ 156.75±0.25 210±0.25 90±0.3 The allowable dimensions of pseudo-square wafers are indicated in Figure 2 and Table2. Pseudo-square wafers have round chamfers at the corners. The length of round chamfer projected to the edge, C , requires the same for all corners. If the wafer edge length is changed, it is recommended that the increase or decrease step be an integral multiple of 1 millimeter. 2、 Specifications for Geometric Characteristics 几何特性要求 ➢ Thickness and Total Thickness Variation 厚度及总厚度变化 The center point wafer thickness or average wafer thickness shall be specified. If the thickness is changed, it is recommended that the increase or decrease step be an integral multiple of 1 micron. The total thickness variation within a wafer shall be less than 15 of the specified wafer thickness. 3、 Progress on the project 标准进展 ➢ Project process 立项介绍 2017, A New Work Item Proposal NWIP has been proposed as a Standard entitled “Photovoltaic Crystalline Wafers -Part2 Specifications for Geometric Characteristics” in PVQAT TG13. 2018.04, China Electronics Standardization Institute CESI has adopted this proposal and is already in the process of submitting to the IEC. 2018.10, Participate in IEC/TC82/WG8 meeting held in Busan, Korea, for standard discussion. 3、 Progress on the project 标准进展 ➢ Draft companies 起草单位 UL PASANMeyer Burger Hanwha Q-cells vina solar Photowatt viridian solar XXX 国外企业国内企业 保利协鑫能源控股有限公司 中国电子技术标准化研究院 西安隆基硅材料股份有限公司 晶科能源有限公司 阿特斯阳光电力科技有限公司 扬州荣德新能源科技有限公司 晶澳太阳能科技有限公司 瑟米莱伯贸易 上海 有限公司 江西赛维 LDK太阳能高科技有限公司 XXX 3、 Progress on the project 标准进展 ➢ To be improved 待完善内容 Given the change suggestion of the chamfer or diagonal of the silicon wafer when the edge width changes. 给出硅片边宽变化时 , 方形硅片倒角 、 准方形硅片对角线的变化关系或建议 。 Briefly describe the test method with reference to the 62904-1 standard. 参照 62904-1标准对测试方法进行简述 。 4、 Work Plan for the Next Step 下一步工作计划 2018.12 Standard Draft 完成标准草案 2019.05 CD ( committee draft for circulation ) 形成委员会草案 2019.12 CDV( committee draft for vote) 委员会草案投票 Thanks for contributions from all working group members and PV experts
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