【CITPV】MWT电池技术及进展分享

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Innovation Changes The World 目录 123 Innovation Changes The World Innovation Changes The World Structure of conventional H-pattern cells and their connection1. The positive and negative electrodes are located at the sides of rear and front, respectively.2. The connection of cells in module manufacturing is in series, or from the front of a cell to the rear side of the neighboring one by ribbons.3. An appropriately large enough cross section of the ribbons has to be used to keep low CTM loss, especially for higher current of larger wafers . Innovation Changes The World The weakness of conventional modulesTo meet the requirement of an appropriately large enough cross section, a compromise for the thickness and width have to be maintained for the ribbons. Therefore,Shadowing to some extent at the from side is not avoidable due to the width of the ribbons,A stress on the cells due to ribbons-soldering and bending of ribbons at the cell edge exists automatically, and finally causes cracks. The cracks will enhance the power degradation of the modules. Any idea to reduce the shadowing and avoid the stress/cracksBack contact technology Innovation Changes The World Back contact technology1. PN junction at the rear --- IBCu Emitter located at the backside of the backsideu Both the base contact grid and emitter contact grid are located at the backside.u Rely on wafers of long lifetime – N-type wafers Started in 1970sIssues ---- Cost reduction Innovation Changes The World 2. Emitter Wrap-through Technology EWTu Emitter located at the front of the wafersu No grid at the frontu The through-wafer connection is realized by dopped areasu All grids are located at the rear of the cell.Started from 1994The density of holes has to be high, normally used in thin film cells, rather than in bulk crystalline Si cells. Potential in thin wafer cells Innovation Changes The World 3. Metal Wrap-through Technology MWTu Emitter is located at the front sideu Some grids mainly the busbars are moved to the backside of the cells,u Only the fingers are kept at the front of the cells, which are connected to the backside through the holes filled with silver paste. Originally publicly released in 1998Mass production only in Sunport Power until . Innovation Changes The World Innovation Changes The World After 6 years development, especially a lot R By abandoning the traditional high-temperature welding, the stress and micro cracks caused by welding can be avoided; Our products have passed the Triple harsher and extreme envirometnal tests based on the IEC standard in the independent 3-party labAdvanced MWT Technology with imported Industrial 4.0 equipment from Europe ●Differentiation from conventional modules obviously, more stylish appearance.●The only large-scale module in the market without main grid , higher recognition.●Different from the conventional modules, unique pattern layout comes with “security“. Aesthetics AppearanceHigh-efficiency modules with beautiful patterns High Reliability Innovation Changes The World Performance comparison between MWT and conventional modules Module Type First-year Decay Second-year Decay Liner decay Value Residue power after 25 years Residue power after 30 yearsMWT-Mono 2.00 0.55 0.55 84.80 82.05MWT-Poly 2.00 0.55 0.55 84.80 82.05Conv-Mono 3.00 0.70 0.70 80.20 //Conv-Poly 2.50 0.70 0.70 80.70 // More Power Generation of MWT ModulesMWT/Conv 25 years 30 yearsMWT-mono to conv-mono 3.16 21.93MWT-poly to conv-poly 2.58 21.2575.0080.0085.0090.0095.00 100.00 1 6 11 16 21 26 多晶组件衰减对比 MWT多晶常规多晶 30年30 75.0080.0085.0090.0095.00100.00 1 6 11 16 21 26 单晶组件衰减对比 MWT单晶常规单晶 30年30MWT-PolyConv-Poly MWT -MonoConv-MonoPoly Modules Mono Modules Innovation Changes The World Electricity generation and low cost advantages of MWT in relative.Year MWT power output Conv-mono power output Conv-poly power output MWT-mono yield more power MWT-poly yield more power Lower cost for MWT-mono Lower cost for MWT-poly1 98.00 97.0 97.50 1.03 0.51 -1.02 -0.512 97.45 96.3 96.80 1.19 0.67 -1.18 -0.673 96.90 95.6 96.10 1.36 0.83 -1.34 -0.834 96.35 94.9 95.40 1.53 1.00 -1.50 -0.99 24 85.35 80.9 81.40 5.50 4.85 -5.21 -4.6325 84.80 80.2 80.70 5.74 5.08 -5.42 -4.83Average of 25 years 3.16 2.58 -3.06 -2.52Average of 30 years 21.93 21.25 -17.99 -17.52 Innovation Changes The World Innovation Changes The World Top Runner Project in Baicheng, Jilin Innovation Changes The World Top Runner Project in Delingha,Qinghai Innovation Changes The World Solar Rooftop above Swimming Pool in Holland Power Plant in HollandSolar Rooftop above Flower Market in Holland Family Power Station in Europe Innovation Changes The World Power Plant in Shandong Innovation Changes The World Henan Province Project Hebei Province Project Hebei Province Project Hebei Province Project Hebei Province Project Jiangxi Province Project Innovation Changes The World Innovation Changes The World The compatibility of MWT1. Conventional P type BSF cells √2. Perc processing √3. Black silicon for multi-Si √4. HIT/HJT √5. IBC Except IBC structure, which is already a type of back-contact scheme, all other structures can be combined with MWT. So, MWT will be the dominant solution. Innovation Changes The World Use of Thin Wafers1. Mono wafers of 160 µm in thickness have been used mass-production lines. Nothing abnormal in efficiency and breakage rate2. Mono wafers of 140 µm in thickness are under test A little drop in efficiency -0.2 and rise in breakage rate 1.5, more optimization work is going. In mass production in May 2019 expected3. Mono wafers of 120 µm in thickness are possibleMass production expected end of 2019.Efficient way for cost reduction